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Si4834BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.022 at V GS = 10 V
0.030 at V GS = 4.5 V
I D (A)
7.5
6.5
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? PWM Optimized
? 100 % R g Tested
SCHOTTKY PRODUCT SUMMARY
? Compliant to RoHS Directive 2002/95/EC
V DS (V)
V SD (V)
Diode Forward Voltage
I F (A)
APPLICATIONS
30
0.50 V at 1.0 A
2.0
?
Symmetrical Buck-Boost DC/DC Converter
SO-8
D 1
D 2
S 1
1
8
D 1
G 1
2
7
D 1
Schottky Diode
S 2
G 2
3
4
6
5
D 2
D 2
G 1
G 2
Top View
Ordering Information: Si4834BDY-T1-E3 (Lead (Pb)-free)
S 1
S 2
Si4834BDY -T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
30
± 20
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
7.5
6.0
30
5.7
4.6
A
Continuous Source Current (Diode Conduction) a
I S
1.7
0.9
Maximum Power Dissipation a
T A = 25 °C
T A = 70 °C
P D
2.0
1.3
1.1
0.7
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJF
52
93
35
62.5
110
40
53
93
35
62.5
110
40
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72064
S09-0869-Rev. D, 18-May-09
www.vishay.com
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